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Kemasan: Kardus
Produktivitas: 1000000000 pcs/week
Transportasi: Ocean,Land,Air
Tempat asal: Cina
Dukungan tentang: 7000000000 pcs/week
Sertifikat: GB/T19001-2008/ISO9001:2008
Kode HS: 8541401000
Pelabuhan: SHENZHEN
Jenis pembayaran: T/T,Paypal,Western Union
Inkoterm: FOB,EXW,FCA
Model No: 503IRBT-94L/14I100-45A
Merek: LED terbaik
Jenis Suplai: Produsen asli
Bahan Referensi: lembaran data, Foto
Tempat Asal: Cina
Jenis: LED
Jenis Paket: Melalui Lubang
Certification: EN62471
Usage: CCTV camera, Electronic Products
Luminous Intensity: High Directivity
Formation: Gold Thread
Type: Infrared LED
Current: 100mA
Wavelength: 940nm
Polarity: Short Pin Mark Cathode
Type Of Lens: Blue Lens
Beam Width: 45 Degree
Antistatic Bag: 1000PCS/Bag
Voltage: 1.35V
Power: 0.135W
Radiation Intensity: 12-22mw/sr
Menjual unit: | Piece/Pieces |
---|---|
Tipe paket: | Kardus |
- Size: 5.0*H8.7mm - Chip Number:1 chips - Color: 940nm - Type: water clear - Chip brand: Tyntek |
- Power: 0.3W - Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
*Warna dalam foto diambil berdasarkan kamera, silakan ambil warna yang sebenarnya sebagai standar.
Peringkat maksimum absolut pada TA = 25 ℃
Parameter |
Symbol |
Rating |
Power Dissipation |
Pd |
200mw |
Pulse Forward Current |
IFP |
1000mA |
Forward Current |
IF |
100mA |
Reverse Voltage |
VR |
5V |
Junction Temperature |
Tj |
115°C |
Operating Tempertature |
Topr |
-40 - +80°C |
Storage Tempertature |
Tstg |
-40 - +100°C |
Soldering Temperature |
Tsol |
260°C |
Electro-Static-Discharge(HBM) |
ESD |
3000v |
Warranty |
Time |
5Years |
Antistatic bag |
Piece |
1000Back |
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us. |
||
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C |
Karakteristik optik dan listrik ( T C = 25 ℃ )
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Forward Voltage |
VF |
1.1 |
1.2 |
1.4 |
V |
IF=50mA |
1.2 | 1.4 | 1.5 |
V |
IF=100mA | ||
2.0 |
V |
IF=1000mA | ||||
Rediant Intensitye |
Ee |
|
7 |
11 |
mw/sr |
IF= 50mA |
12 | 15 |
22 |
mw/sr | IF=100mA | ||
|
150 |
|
mw/sr | IF=1000mA | ||
Luminous Power |
PO |
17 |
mw | IF=50mA | ||
28 |
mw |
IF=100mA |
||||
280 |
mw |
IF=1000mA |
||||
Peak Wavelength |
λP |
|
940 | 950 |
nm |
IF=20mA |
Half Width |
Dl
|
|
25 |
|
nm |
IF=20mA |
Viewing Half Angle |
2q1/2 |
|
±22 |
|
deg |
IF=20mA |
Reverse Current |
IR |
|
|
5 |
uA |
VR=5V |
*Luminous Intensity is measured by ZWL600. |
||||||
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. |
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*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.