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Kemasan: Kardus
Produktivitas: 1000000000 pcs/week
Transportasi: Ocean,Land,Air
Tempat asal: Cina
Dukungan tentang: 7000000000 pcs/week
Sertifikat: GB/T19001-2008/ISO9001:2008
Kode HS: 8541401000
Pelabuhan: SHENZHEN
Jenis pembayaran: T/T,Paypal,Western Union
Inkoterm: FOB,EXW,FCA
Model No: 1206PT850D &1206IRC-85L
Merek: LED terbaik
Menjual unit: | Piece/Pieces |
---|---|
Tipe paket: | Kardus |
1206PT850D & 1206IRC-85L
Ada dua jenis LED di atas, yang putih adalah pemancar LED inframerah 850nm dan yang hitam adalah penerima IR dari jenis tampilan atas LED 850nm yang juga dapat disebut sebagai dioda foto 850nm. Di sirkuit, pemancar LED 850nm memancarkan sinyal dan kemudian penerima IR akan menerimanya. Biasanya, penerima IR akan dikemas sebagai lensa hitam untuk menyaring beberapa cahaya ekstra kita, yang bisa memastikannya hanya bisa mendapatkan sinyal yang kita butuhkan. Untuk penerima IR, ada juga bentuk lain untuk dipilih, seperti round top 3mm, round top 5mm, tipe LED 3528 SMD dll.
- Size: 2.0*1.25*0.8mm - Chip Number: 1 chip - Color: 850nm LED - Type: Surface mount device - Chip brand: Epistar |
- Polarity Mark - Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
-ParameterDimensi-
Casing LED SMD ini juga tersedia untuk LED IR, LED UV, LED SMD Biru, LED SMD Merah, LED Amber dll.
* Warna dalam foto diambil dengan kamera, harap gunakan warna yang dipancarkan sebenarnya sebagai standar.
- Parameter Listrik -
Peringkat Maksimal Mutlak Pada Ta = 25 ℃
Parameter |
Symbol |
Rating |
Power Dissipation |
Pd |
50mW |
Pulse Forward Current |
IFP |
100mA |
Forward Current |
IF |
30mA |
Reverse Voltage |
VR |
5V |
Junction Temperature |
Tj |
115°C |
Operating Tempertature |
Topr |
-40 - +80°C |
Storage Tempertature |
Tstg |
-40 - +100°C |
Soldering Temperature |
Tsol |
260°C |
Electro-Static-Discharge(HBM) |
ESD |
2000v |
Warranty |
Time |
2Years |
Antistatic bag |
Piece |
3000Back |
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us. |
||
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C |
Karakteristik Optik dan Listrik ( T c = 25 ℃ )
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Forward Voltage |
VF |
1.3 |
|
1.6 |
V |
IF=30mA |
Pulse Forward Voltage |
VF |
|
2.0 |
|
V |
IFP=100mA |
Radiant Intensity |
IE |
2.3 |
|
4.8 |
mw/sr |
IF=30mA |
Peak Wavelength |
λP |
845 |
850 |
858 |
nm |
IF=30mA |
Total Radiated Power |
PO |
|
3.2 |
|
mw |
IF=30mA |
Half Width |
Dl |
|
50 |
|
nm |
IF=30mA |
Viewing Half Angle |
2q1/2 |
|
±70 |
|
deg |
IF=30mA |
Reverse Current |
IR |
|
|
5 |
uA |
VR=5V |
Rise Time |
Tr |
|
25 |
|
ns |
IF=30mA |
Fall Time |
Tf |
|
13 |
|
ns |
IF=30mA |
*Luminous Intensity is measured by ZWL600. |
||||||
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. |
||||||
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. |
1206 smd Penerima
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Collector-Emitter Voltage |
VCEO |
|
|
30 | V |
|
Emitter-Collector Voltage |
VECO |
|
|
5 | V |
|
Collector Dark Current |
ICEO |
|
|
30 |
nA |
VCE=20V Ee=0mw/cm2 |
Collector Dark Current |
ICEO |
|
|
150 | uA |
VCE=70V Ee=0mw/cm2 |
On State Collector Current |
IC(on) |
|
0.7 |
4
|
mA |
Ee=1mw/cm2 Vce=5v |
Collector-Emitter Breakdown Voltage |
Bvceo |
85 |
|
|
V |
ICBO=100uA Ee=0mw/cm2 |
Emitter-Collector Breakdown Voltage |
Bvceo |
8.2 |
|
V |
IECO=10uA |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
|
|
0.3
|
V |
IC=2mA IB=100uA Ee=1mw/cm2 |
Photocurrent 1 |
IPCE |
300
|
|
400
|
uA |
Vce=5V Ee=1mw/cm2
λP=850nm |
Photocurrent 2 |
IPCE | 500 |
|
600 | uA |
VCE=5V Ee=1mw/cm2 λP=940nm |
Current gain |
hFE |
200
|
|
3000
|
uA |
VCE=5V IC=2mA |
Wavelenghth of Peak Sensitivity |
λP |
|
850
|
|
nm |
|
Range of Spectral Bandwidth |
λ0.5 |
700
|
|
1100
|
nm |
|
Response Time-Rise Time |
tR |
|
15 |
|
us |
Vce=5v Ic=1mA
RL=1000Ω |
Response Time-Fall Time |
tF |
|
15 |
|
us | |
Half Sensitivity angle |
△λ |
|
±10 |
|
deg |
|
Collector-base Capacitance |
CCB |
|
|
8 | PF | F=1MHz,VCB=3V |
- Koneksi Kawat Emas -
- Pengepakan -
* Kami mengemasnya dengan kemasan vakum setelah merekatkannya sebagai gulungan
- Aplikasi -
- LED Terkait -
- Produksi -
- Gunakan -
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.